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| Ordering number : EN8719 ECH8622R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8622R Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 12 7 40 1.4 1.5 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 10 0.5 6 12.6 13.3 14.3 15 10 18 19 22 25 1220 180 140 23 25 29 34 1.3 typ max Unit V A A V S m m m m pF pF pF Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : WG Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PE MS IM TB-00002071 No.8719-1/4 ECH8622R Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7A VDS=10V, VGS=4.5V, ID=7A VDS=10V, VGS=4.5V, ID=7A IS=7A, VGS=0V Ratings min typ 585 1680 4960 2660 14 2 4.3 0.84 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7011A-003 Top View Electrical Connection 8 7 6 5 0.25 2.9 0.15 8 5 0 to 0.02 1 1 0.65 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 2.8 2.3 4 0.3 0.9 0.25 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Bottom View 0.07 SANYO : ECH8 Switching Time Test Circuit VIN 4V 0V VIN ID=3.5A RL=4.28 VDD=15V D PW=10s D.C.1% Rg VOUT G ECH8622R P.G 50 S Rg=1k No.8719-2/4 ECH8622R 10 9 8 ID -- VDS 4.5V 3.5 V 14 ID -- VGS VDS=10V 12 Drain Current, ID -- A 3.0 V Drain Current, ID -- A 7 6 5 4 3 2 10 2.5V 8 2.0V 1.5V 6 Ta=7 5C 0 0.5 1.0 4 2 1 0 0 0.5 1.0 1.5 VGS=1.0V 2.0 IT08324 0 1.5 2.0 2.5 IT08325 Drain-to-Source Voltage, VDS -- V 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 45 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 28 26 40 35 30 25 20 15 10 5 --50 ID=4A 24 2A 22 20 18 16 14 2 3 4 5 6 7 8 9 10 IT11238 1V 0V =3. =4. A, =2 V GS , V GS ID A, 4 4A I D= I D= V =4.5 , VGS 4A I D= =2 V GS .5V 0 50 100 25C 150 --25C 200 IT11239 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- C 10 7 5 3 2 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 2 10 7 5 Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 3 2 Ta C -25 =- C 25 1.0 0.1 0.001 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 2 10 IT08328 100 7 5 3 2 7 Ta= 75 C 25 C --25 C 0.4 0.6 C 75 0.8 1.0 1.2 IT08329 SW Time -- ID Diode Forward Voltage, VSD -- V ASO IDP=40A 10s Switching Time, SW Time -- ns 10000 7 5 3 2 td(off) Drain Current, ID -- A 1m ID=7A DC 10 tf 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 s ms op 0m era s tio tr 1000 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 n( Ta = 25 td(on) Operation in this area is limited by RDS(on). C ) 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Drain Current, ID -- A IT11240 Drain-to-Source Voltage, VDS -- V IT08332 No.8719-3/4 ECH8622R 1.6 PD -- Ta Mounted on a ceramic board (900mm2!0.8mm) 1unit Allowable Power Dissipation, PD -- W 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 To t 1u al D t iss ni ip at io n 80 100 120 140 160 Ambient Temperature, Ta -- C IT08323 Note on usage : Since the ECH8622R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No.8719-4/4 |
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